Store More. Save More. Do More. Intel® QLC Technology and PCIe* Performance

Designed to deliver massive, affordable capacities with PCIe* performance, the Intel® SSD D5-P4326 series consolidates storage footprints and reduces operational cost vs. legacy storage.

The Intel® SSD D5-P4326 offers Intel® QLC Technology, PCIe* performance and the flexibility to scale solutions, maximize capacity, and improve operational efficiency at scale. In addition to a U.2 form factor, the Intel® SSD D5-P4326 is also the industry's first SSD in the innovative E1.L form factor to offer Intel® QLC Technology based on EDSFF*.

The Intel® SSD D5-P4326 includes Intel® QLC's 33% more bits per cell than prior generation Intel® 3D NAND drives1, consolidating the data center storage footprint up to 20x.2 In addition to capacity, replacing HDDs with Intel® QLC 3D NAND SSDs reduces power, cooling, and drive replacement costs.3 Thanks to the PCIe*-based design, performance also gets a boost over SATA drives, allowing greater usable capacity meeting IOPS/TB requirements.4

What is EDSFF?

The Enterprise and Data center SSD Form Factor, created by a workgroup of 15 industry leaders to address data center storage concerns and define industry standard form factors, driven by three guiding principles:

  • Enable scale
  • Optimize total cost of ownership
  • Enable dynamic range of solutions

Store More: Large Capacity in a Small Space

The D5-P4326 with Intel® QLC Technology was designed to optimize per drive capacity with initial capacity at 15.36TB and future scaling to 30.72TB later in 2019. And, when delivered on the first-in-industry E1.L form factor, the D5-P4326 takes storage efficiency to another level with initial chassis designs supporting up to 32 drives in a 1U server. The combination of per drive and per rack capacity efficiency provides up to 10x storage consolidation compared to 8TB U.2 SSDs and up to 20x consolidation compared to 4TB HDDs. In fact, with E1.L-based chassis designs up to 36 drives possible, the D5-P4326 can scale to 1PB in 1U.

Save More: Innovations Delivering Operational Efficiency

The D5-P4326 is a cost-optimized addition to Intel's QLC family. This affordability makes the D5-4326 ideally suited to displace hard discs in all-HDD arrays and hybrid arrays. In addition to storage consolidation noted in the previous section, data centers choosing to displace their HDDs can lower-power cost, reduce cooling cost, and significantly save on drive replacement cost. When delivered on the operationally efficient E1.L form factor, data centers can realize even more cooling savings with the thermally optimized design and improve manageability and serviceability at scale with capabilities such as LED status lights, drive specific power cycling, and opportunities to reduce component count.

Do More: PCIe* Accelerates Workloads at Large Capacities

The IOPS of a drive is a fixed number meaning that as a drives capacity gets larger IOPS/TB get smaller. This can be problematic with certain storage workloads that have minimum IOPS/TB requirements. The performance advantage of the PCIe* interface vs. SATA interface means IOPS/TB remain sufficiently high even as capacities scale.

Backed by Intel Experience and Innovation

Intel brings longstanding expertise and disruptive innovation in data management to address the capacity and performance issues of today's data centers. Prepare for the future with PCIe* Intel® QLC 3D NAND SSDs, backed by Intel's technology and manufacturing leadership.

Features at-a-Glance

Model Intel® SSD D5-P4326
Capacity and Form Factor U.2 15mm: 15.36TB
E1.L 9.5mm: 15.36TB, 30.72TB (Available Q3 2019)
E1.L 18mm: 15.36TB, 30.72TB (Available Q3 2019)
Interface PCIe* Gen3.1 x 4
Media 64-layer, QLC 3D NAND
Performance Sequential R/W up to 3,200/1,600 MB/s
Random R/W up to 580K/15K IOPS5
Endurance 0.18 DWPD (Random) / 0.9 DWPD (Sequential)
DWPD = drive writes per day
Reliability AFR: < 0.44%
UBER: 1017 bits read
MTBF: 2 million hours
Power Active: 20W
Idle: 5W
Enhanced power-loss data protection
Operating Temperature 0° C to 70° C
Warranty 5-year limited warranty

Intel® SSD D5-P4326 Series

Информация о продукте и производительности


Source: Intel. 33% more bits per cell. TLC (tri-level cell) contains 3 bits per cell and QLC (quad level cell) contains 4 bits per cell. Calculated as (4-3)/3 = 33% more bits per cell.


Источник: Intel. Сокращение площади системы хранения данных до 20 раз. Сравнение 3,5-дюймовых жестких дисков WD Gold TB Enterprise-Class 7200 об/мин емкостью 4 ТБ, размер которых позволяет использовать до 24 жестких дисков на узел 2U с твердотельными накопителями Intel® D-5 P4326 форм-фактора E1.L емкостью 30,72 ТБ (появятся в продаже в будущем), позволяющими использовать 32 накопителя на узел 1U.


2U (общее электропотребление 1971 Вт) твердотельный накопитель: активное электропотребление 2,2 Вт, AFR 44%, 32 накопителя в корпусе 1U (общее электропотребление 704 Вт). Расходы на охлаждение основаны на сроке развертывания 5 лет со стоимостью кВт•ч 0,158 доллара и расходе 1,20 Вт на 1 Вт потребления диском. Основано на показателях 24 3,5-дюймовых жестких дисков в корпусе 2U и 32 накопителях форм-фактора EDSFF длиной 1U в стойке 1U. В основе гибридной системы хранения — твердотельный накопитель Intel TLC для кэш-памяти. Сокращение расходов на замену дисков. Расчет: жесткий диск с AFR 2% x 256 дисков x 5 лет = 25,6 замены за 5 лет; твердотельный накопитель: AFR 0,44% x 32 накопителя x 5 лет = 0,7 замены за 5 лет.


Источник: NetApp. Масштабирование доступной емкости. Доступной емкостью считается любая емкость накопителя, которая может предоставить до 10 тыс. произвольных операций чтения 4K IOPS/ТБ независимо от общей емкости накопителя. Данные основаны на информации в статье блога NetApp (, в которой около 8 тыс. IOPS/ТБ определяется как «максимальное» пороговое значение для рабочей нагрузки.


Твердотельный накопитель Intel® D5-P4326 использует Indirection Unit (IU) 16 КБ. По рекомендациям Intel, размер буфера записи должен совпадать с размером IU. Обратитесь к представителю Intel, чтобы узнать подробнее о том, как оптимизировать производительность и износостойкость твердотельного накопителя с IU.