Cloud Inspired. Storage Optimized.

Designed for modern cloud storage solutions such as software-defined and converged infrastructures.

Pairing a new Intel developed controller, unique firmware innovations, and industry-leading 3D NAND density, the Intel® SSD DC P4500 Series—a member of the Intel® 3D NAND SSD family—delivers an all new design to support cloud storage and software-defined infrastructures. The Intel® SSD DC P4500 Series is stacked with a blend of performance, capacity, manageability, and reliability to help data centers fast-track their business and meet the overall demands of their digital business. To meet data center’s exacting needs for growing capacity, easy serviceability, and thermal efficiency, the DC P4500 is now available in the revolutionary “ruler” form factor.

An SSD Built for Cloud Storage Architectures
The cloud continues to drive innovation, new services, and agility for businesses, which are seeing the need to deploy services faster, scale effectively, and reduce the human costs of managing assets. Multi-cloud has become a core element for any enterprise strategy, with top cloud providers openly embracing PCIe*/NVMe*-based SSDs because of the scalable performance, low latency, and continued innovation.

Within the shift to the cloud is an increased adoption of software-defined and converged infrastructures. This fast adoption is being driven by the need to increase efficiency, refresh existing hardware, deploy new workloads, and reduce operational expenditures.

The Intel® SSD DC P4500 Series significantly increases server agility and utilization, while also accelerating applications, across a wide range of cloud workloads.

Optimized for Storage Efficiency Across a Range of Workloads
This cloud-inspired SSD is built with an entirely new NVMe* controller, optimized for read intensive workloads, and designed to maximize CPU utilization.

With controller support for up to 128 queues, the Intel® SSD DC P4500 Series helps minimize the risk of idle CPU cores and performs most effectively on Intel platforms with Intel® Xeon® processors. The queue pair-to-CPU core mapping supports high drive count and also supports multiple SSDs scaling on Intel platforms.

With the Intel® SSD DC P4500 Series, data centers can increase users, add more services, and perform more workloads per server, or quickly repartition to adapt to conditions. Now you can store more and know more.

Manageability to Maximize IT Efficiency
The Intel® SSD DC P4500 Series is built for software-defined cloud infrastructures across the multi-cloud environment to enable greater efficiency within existing server footprints.

New firmware manageability features help reduce server downtime through improved update processes and expanded monitoring capabilities.

SMART management and Intel custom log pages provide advanced drive telemetry to manage thermals, monitor endurance, and track drive health status. Management coverage is now expanded across a wider range of drive states with support for the NVMe-Management Interface (NVMe-MI) specification, an industry standard way to manage the SSD out-of-band.

The new “ruler” form factor further improves service efficiency with support for programmable LEDs to enable indication of more device states; integrated power cycling to enable remote, drive specific reboot; and, an integrated pull latch for optimal front-end servicing.

Industry-Leading Reliability and Security
As capacity per server continues to scale, the risk of data corruption and errors increases. With an eye toward this risk, Intel has built industry-leading end-to-end data protection into the Intel® SSD DC P4500 Series.1 This includes protection from silent data corruption, which can cause catastrophic downtime and errors in major businesses.

Power Loss Imminent (PLI) provides protection from unplanned power loss, and is obtained through a propriety combination of power management chips, capacitors, firmware algorithms, and a built-in PLI self-test. Intel’s PLI feature provides data centers with high confidence of preventing data loss during unplanned power interrupts.

Designed for Today’s Modern Data Centers
The Intel® SSD DC P4500 Series is Intel’s new 3D NAND SSD for read-intensive workloads in cloud-driven data centers. The mix of performance, capacity, manageability, and reliability make it the ideal solution for software-defined and converged infrastructures.

Features and Benefits

Capacity 1, 2, 4, 8 TB
Performance2 3 64k sequential read/write – up to 3,300/1,900 MB/s
4k random read/write – up to 645,000/65,600 IOPS
Manageability Support for NVM Express*-Management Interface (NVMe*-MI), NVMe* SMART / Health and Log Pages
Reliability1 End-to-end data protection, protection from silent data corruption, uncorrectable bit error rate < 1 sector per 1017 bits read
Interface PCIe* 3.0 x4, NVMe 1.2
Form Factors


U.2 2.5in x 15mm (for serviceability, hot-plug, and density)
Add-in-Card: Half-height half-length, low-profile (for legacy and mainstream server compatibility)

Media Intel® 3D NAND, TLC
Endurance Random/JEDEC up to 0.75 DWPD / 7 PBW, sequential workload up to 4.62 DWPD / 19.8 PBW 
Power Max read/write 10W / 20W
Warranty 5 year warranty

Intel® SSD DC P4500 Series

Информация о продукте и производительности


Источник: Intel. Комплексная защита данных подразумевает использование набора методов для обнаружения и исправления целостности данных на всем пути по мере их чтения или записи между хостом и контроллером и носителем информации твердотельного накопителя. Тестирование выполнялось для твердотельных накопителей Intel® DC S3520, Intel® DC P3520, Intel® DC P3510, Intel® DC P4500, Samsung* PM953, Samsung PM1725, Samsung PM961, Samsung PM863, Micron* 7100, Micron 510DC, Micron 9100, HGST* SN100, Seagate* 1200.2, SanDisk* CS ECO. Заявление основано на среднем коэффициенте ошибок накопителей Intel по сравнению с коэффициентами ошибок накопителей других производителей. Для определения коэффициентов скрытого повреждения данных и оценки общей эффективности комплексной защиты данных использовалось нейтронное излучение. Повреждение данных в контроллере твердотельного накопителя может вызываться ионизирующим излучением, шумом сигнала и перекрестными помехами, а также нестабильностью SRAM. Скрытые ошибки измерялись во время исполнения и после перезагрузки, когда накопитель «зависал». Сравнивались ожидаемые данные с фактическими данными, возвращаемыми накопителем. Годовой показатель повреждения данных экстраполировался из показателя, полученного при ускоренном тестировании частоты к ускорению альфа-частиц (см. стандарт JEDEC* JESD89A).


Неизменность производительности измерялась с использованием FIO* на основании последовательной рабочей нагрузки 64 КБ при глубине очереди = 128 (глубина очереди = 32, обработчики = 4), измерялись следующие показатели: (самое медленное выполнение операций ввода-вывода в секунду в 99,9-м процентиле с интервалом в 1 секунду)/(среднее количество операций ввода-вывода в секунду). Измерения выполнялись для диапазона адресов логических блоков (LBA) на всем твердотельном накопителе после достижения устойчивого состояния рабочей нагрузки, включая все фоновые процессы, необходимые для нормального функционирования и надежности данных.


Производительность измерялась при глубине очереди (QD) = 1 и глубине очереди = 256 (глубина очереди = 64, обработчики=4). Измерения выполнялись для диапазона адресов логических блоков (LBA) на всем твердотельном накопителе.