Intel® Memory Drive Technology

Intel® Memory Drive Technology

Enabling more affordable or bigger memory solutions for data centers.

Transparently Integrate SSDs into the Memory Subsystem

Intel® Memory Drive Technology is a revolutionary software that extends system memory transparently. Combined with an Intel® Optane™ Solid State Drive (SSD), Intel® Memory Drive Technology transparently integrates the SSD into the memory subsystem and makes it appear like DRAM to the OS and applications. Intel® Memory Drive Technology increases memory capacity beyond DRAM limitations and delivers DRAM-like performance in a completely transparent manner to the operating system and application. In addition, no changes are required to the OS or applications.

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Enable New Possibilities

The combination of cost-efficiency and increased capacity means enterprises can break through today’s memory limits, enabling new possibilities—like accessing higher-capacity, in-memory datasets to deliver better, faster analytics insight. As an example, cloud providers can reduce capital cost for memory when enabled to oversubscribe workloads with greater overall capacity. Or, high-performance computing centers can increase large memory datasets to improve research and scientific results, and test new simulations quickly and cost-efficiently.

Displace DRAM

Deliver more affordable memory pools by displacing a portion of DRAM. By pairing the DRAM with the high-performing non-volatile memory of the Intel® Optane™ SSD, data centers can more cost-effectively execute workloads that require high-end memory configurations with much lower DRAM capacity installed, saving on both Capex, and Opex costs.

Extend Memory

Grow your memory footprint beyond the DRAM capacity. Together, the DRAM and the Intel® Optane™ SSD emulate a single volatile memory pool. Intel® Memory Drive Technology intelligently determines where data should be located in the pool to maximize performance, enabling servers to deliver performance across many workloads— even when DRAM is only supplying one-third to one-tenth of the memory pool capacity.